Electron microscope study of modulated structures and heterointerfaces in LPE-grown GaInAsP layers lattice-matched on GaAs-Reference-Cited by-同舟云学术

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Electron microscope study of modulated structures and heterointerfaces in LPE-grown GaInAsP layers lattice-matched on GaAs

Published:1989-11 Issue:1-2 Volume:98 Page:82-89
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kuwano Noriyuki,Fukuda Kohji,Oki Kensuke,Tanaka Shigeyasu,Hiramatsu Kazumasa,Akasaki Isamu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Proc. 8th Intern. Symp. on GaAs and Related Compounds;de Cremoux,1981

2. Miscibility gaps in quaternary III/V alloys

3. Proc. 10th Intern. Symp. on GaAs and Related Compounds;Launois,1983

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transmission electron microscopy study of thin-layer structure grown by liquid phase epitaxy;Journal of Crystal Growth;1996-09

2. Diffuse scattering in partially ordered III-V semiconductor alloys;Physical Review B;1995-08-15

3. Ordered Structures and Phase States in Epitaxial Layers of III–V Semiconductor Alloys;Japanese Journal of Applied Physics;1990-04-20

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