On the nature of the edge growth in liquid phase epitaxy of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Quasi-grown layers in liquid phase epitaxial growth
2. Investigation of Melt Carry‐Over during Liquid Phase Epitaxy: I . Growth of Indium Phosphide
3. Influence of cooling rate on convection during LPE growth of GaAs and (Ga,Al)As
4. Growth of AlGaAs-GaAs heterostructures from step-cooled solutions
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modified technique of using conventional slider boat for liquid phase epitaxy of silicon for solar cell application;Bulletin of Materials Science;2003-10
2. Control of adhesion to the mask of epitaxial laterally overgrown GaAs layers;Journal of Applied Physics;2001-12-15
3. The application of Makyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth;Journal of Crystal Growth;2001-02
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