Real time observation and formation mechanism of Ga droplet during molecular beam epitaxy under excess Ga flux
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. In situ observation of molecular beam epitaxy of GaAs and AlGaAs under deficient As4 flux by scanning reflection electron microscopy
2. Surface Migration of Ga and Al Atoms on (100) GaAs and AlAs during Migration-Enhanced Epitaxy
3. In-situ observation of roughening process of MBE GaAs surface by scanning reflection electron microscopy
4. MBE monolayer growth control by in-situ electron microscopy
5. μm-Scale Lateral Growth of Ga-Monolayers Observed In-Situ by Electron Microscopy
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1. Mechanism of Aluminum Droplet Nucleation and Ripening on GaAs(001) Surface by Molecular Beam Epitaxy;Journal of Electronic Materials;2022-10-27
2. Independent wavelength and density control of uniform GaAs/AlGaAs quantum dots grown by infilling self-assembled nanoholes;Journal of Applied Physics;2012-09
3. Morphology and wetting layer properties of InAs/GaAs nanostructures;physica status solidi (c);2009-04
4. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant;Thin Solid Films;2005-03
5. On the morphology of films grown by droplet-assisted molecular beam epitaxy;Brazilian Journal of Physics;2002-06
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