Growth of ZnSe films on GaAs by ionized cluster beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Characterization of ZnSe grown by molecular-beam epitaxy
2. ZnSe growth by laser-enhanced metal-organic chemical vapour deposition
3. Atomic layer epitaxy of ZnSe on GaAs(100) by metalorganic molecular beam epitaxy
4. Vaporized-metal cluster formation and ionized-cluster beam deposition and epitaxy
5. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of crystalline ZnSe:N thin films by pulsed laser ablation deposition;Vacuum;2001-11
2. Pulsed laser deposition of ZnSe:N epilayers assisted by active atomic nitrogen beams;Current Applied Physics;2001-08
3. Growth of ZnSe:N epilayers by pulsed laser ablation deposition;Journal of Physics D: Applied Physics;2000-01-24
4. Growth of ZnTe films by ionized cluster beam epitaxy at low temperature;Thin Solid Films;1996-03
5. p-Type nitrogen doped ZnSe epilayers by ionized cluster beam epitaxy;Journal of Crystal Growth;1995-04
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