Selectively embedded growth by chemical beam epitaxy for the fabrication of InGaAs/InP double-heterostructure lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow
2. Selective growth of GaAs in the MOMBE and MOCVD systems
3. Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy
4. Optical and electrical properties of InP/InGaAs grown selectively on SiO2‐masked InP
5. Quantum well electroabsorption modulators at 1.55 μm using single‐step selective area chemical beam epitaxial growth
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SELECTIVELY REGROWN CARBON-DOPED (AL)GAAS BY CHEMICAL BEAM EPITAXY WITH NOVEL GAS SOURCES;J CRYST GROWTH;1995
2. Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources;Journal of Crystal Growth;1995-05
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