A study of dislocations in In-doped LEC GaAs crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Impurity effect on grown‐in dislocation density of InP and GaAs crystals
2. Growth and some physical properties of CdCr2Se4 crystals
3. Dislocation-free GaAs and InP crystals by isoelectronic doping
4. Low dislocation, semi-insulating In-doped GaAs crystals
5. Mechanism for dislocation density reduction in GaAs crystals by indium addition
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Observations of individual precipitate particles associated with the same dislocations within a bulk In-doped GaAs specimen before and after furnace annealing;Materials Letters;1990-08
2. Axial dislocations in LEC-grown In-doped GaAs crystals;Journal of Crystal Growth;1990-06
3. TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS;Defect Control in Semiconductors;1990
4. Trap suppression by isoelectronic In or Sb doping in Si‐dopedn‐GaAs grown by molecular‐beam epitaxy;Journal of Applied Physics;1988-10
5. Dislocation reduction in large-diameter LEC GaAs growth;Journal of Crystal Growth;1988-09
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