In situ measurement method of GaAs surface coverage using secondary electron intensity
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
2. The Technology and Physics of Molecular Beam Epitaxy;Ludeke,1985
3. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES
4. Surface phases of GaAs(100) and AlAs(100)
5. GaAs(001)−c(4×4): A chemisorbed structure
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1. Arsenic-rich GaAs(0 0 1) surface structure;Surface Science Reports;2005-12
2. Ab initio-based Approach to Structural Stability of GaAs Surfaces;Hyomen Kagaku;2003
3. A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces;Surface Science;2001-11
4. Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces;Advances in Scanning Probe Microscopy;2000
5. Scanning tunneling microscopy study of GaAs(001) surfaces;Applied Surface Science;1999-03
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