Direct observation of LPE growth in GaP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. A phenomenological study of meniscus lines on the surfaces of GaAs layers grown by LPE
2. Studies of LPE ripple based on morphological stability theory
3. A temperature gradient cell for liquid phase epitaxial growth of GaAs
4. Behavior of macrosteps and grooves during LPE growth as observed by photoluminescence images
5. Substrate orientation and surface morphology of GaAs liquid phase epitaxial layers
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1. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
2. Equipment and Instrumentation for Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
3. In situ observation for semiconductor solution growth using a near-infrared microscope;Journal of Crystal Growth;2005-02
4. Liquid Phase Epitaxy;Epitaxy;2004
5. In situ observation experiment for semiconductor solution growth under reduced convection condition – a review;Crystal Research and Technology;2003-07
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