Electron mobility in HgCdTe near the zero-band-gap grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Electron mobility in HgCdTe near the zero-band-gap grown by molecular beam epitaxy

Published:1992-02 Issue:1-4 Volume:117 Page:218-221
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sone S.,Oda N.,Sasaki T.,Kawano M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Low Electron Effective Masses and Energy Gap inCdxHg1−xTe

2. Calculation of Ionized-Impurity Scattering Mobility of Electrons inHg1−xCdxTe

3. Pressure and Temperature Dependences ofCdxHg1−xTeAlloy Hall Mobilities

4. Electron Mobility in Hg1−xCdxTe

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Manipulation of electron flow using near-zero index semiconductor metamaterials;Physical Review B;2014-07-29

2. Metamaterial-inspired model for electron waves in bulk semiconductors;Physical Review B;2012-12-05

3. Nano-structure fabrication for HgCdTe ultra-fast infrared sensors;Journal of Physics: Conference Series;2009-09-01

4. Giant magnetoresistance in zero-band-gapHg1−xCdxTe;Physical Review B;1998-05-15

5. Thin, horizontal-plane Hall sensors for read heads in magnetic recording;Measurement Science and Technology;1997-10-01

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