On the mechanism of growth-rate enhancement by photocatalysis in metalorganic vapor phase epitaxy of ZnSe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe
2. The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPE
3. Proc. SPIE Symp. on Laser/Optical Processing of Elecronic Materials;Yoshikawa,1989-1989
4. Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants
5. Effects of Ar ion laser irradiation on MOVPE of ZnSe using DMZn and DMSe as reactants
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1. The reaction mechanisms for precursors in photo-assisted metalorganic-vapor-phase epitaxy growth of ZnSe;Journal of Crystal Growth;2000-12
2. Epitaxial Growth of II–VI Compounds by MOVPE;Processing of Wide Band Gap Semiconductors;2000
3. Photoassisted growth and nitrogen doping of ZnSe;Journal of Crystal Growth;1997-01
4. Chapter 2 Growth and Characterization of ZnSe-based II-VI Semiconductors by MOVPE;Semiconductors and Semimetals;1997
5. Low-Temperature Growth of ZnS by Photoassisted Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1996-07-15
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