Reduced incorporation of unintentional impurities and intrinsic defects in ZnSe and ZnS grown by MOVPE-Reference-Cited by-同舟云学术

Reduced incorporation of unintentional impurities and intrinsic defects in ZnSe and ZnS grown by MOVPE

Published:1992-02 Issue:1-4 Volume:117 Page:336-340
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Heuken M.,Söllner J.,Guimarães F.E.G.,Marquardt K.,Heime K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Room temperature photopumped ZnSe lasers

2. ZnSe light‐emitting diodes

3. M. Heuken, J. Söllner, K. Marquardt, F.E.G. Guimaraes, K. Heime, K. Pieger, J. Straka, M. Emmerling, A. Forchel, T. Ryan and M. Joseph, Poster presented at EW-MOVPE IV, Nijmegen, 1991.

4. GaAlAs laser diodes with metalorganic chemical vapor deposition grown ZnSe layer for injection blocking and optical confinement

5. Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization;Söllner;Proc. SPIE,1991

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