Safety aspects of MOVPE in research and development: An example
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Integrated safety system for MOCVD laboratory
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3. Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
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1. Design of the OMVPE Process;Organometallic Vapor-Phase Epitaxy;1999
2. Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes;Semiconductors and Semimetals;1997
3. MOCVD of Compound Semiconductor Layers;Handbook of Compound Semiconductors;1995
4. Élimination des hydrures métalliques des déchets gazeux d'un réacteur LP-MOVPE pour la croissance de composés (In, Ga) (As, P);Canadian Journal of Physics;1993-07-01
5. Phosphorus and Hydrogen;P Phosphorus;1993
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