Optical studies of InAs/GaAs on GaAs short-period strained-layer superlattices grown by MBE and MEE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
2. Reduction of lasing threshold current density by the lowering of valence band effective mass
3. Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlattices
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InAs/GaAs short-period strained-layer superlattices grown on GaAs as spatial light modulators: uniformity measurements;Superlattices and Microstructures;1997-03
2. InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques;Journal of Crystal Growth;1995-05
3. Ambipolar diffusion and carrier lifetime measurements in all‐binary (InAs)2(GaAs)5strained quantum wells grown on GaAs;Journal of Applied Physics;1993-08
4. Multiple quantum wells consisting of InAs/GaAs short-period strained-layer superlattice wells for 1.3–1.55 μm photonic applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05
5. Enhanced ambipolar in‐plane transport in an InAs/GaAs hetero‐n‐i‐p‐i;Journal of Applied Physics;1993-04-15
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