MBE growth and characterization of InxGa1−xSb/InAs strained layer superlattices-Reference-Cited by-同舟云学术

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MBE growth and characterization of InxGa1−xSb/InAs strained layer superlattices

Published:1991-05 Issue:1-4 Volume:111 Page:677-682
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Fashe R.,Zborowski J.T.,Golding T.D.,Shih H.D.,Chow P.C.,Matsuichi K.,Covington B.C.,Chi A.,Zheng J.,Schaake H.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. The II–VI compounds: 30 years of history and the potential for the next 30 years

2. 0.1 ev HgCdTe photodetectors

3. The CdTe/HgTe superlattice: Proposal for a new infrared material

4. III–V strained layer supperlattices for long‐wavelength detector applications: Recent progress

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface properties of (In,Ga)Sb/InAs heterostructures;Journal of Applied Physics;1996-06

2. Superlattice parameters for optimum absorption in InAs/InxGa1−xSb superlattice infrared detectors;Journal of Applied Physics;1995-06

3. Metalorganic chemical vapor deposition of GaxIn1−xSb ternary alloys;Journal of Crystal Growth;1995-05

4. Characterization of InAs‐GaSb type II superlattices grown by metal organic chemical vapor deposition;Journal of the Chinese Institute of Engineers;1995-03

5. Interface composition control in InAs/GaSb superlattices;Solid-State Electronics;1994-04

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