Studies of the tunneling currents in the InAs/AlSb/GaSb single-barrier interband tunneling diodes grown on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
2. Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature
3. Growth and transport properties of (Ga,Al)Sb barriers on InAs
4. New negative differential resistance device based on resonant interband tunneling
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Positron-annihilation study of vacancy defects in InAs;Physical Review B;1997-04-15
2. Defect Characterization Of InAs Wafers Using Positron Lifetime Spectroscopy;MRS Proceedings;1996
3. Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-01
4. Tin and tellurium doping of InAs using SnTe in molecular beam epitaxy (MBE);Journal of Crystal Growth;1993-06
5. Indium arsenide: a semiconductor for high speed and electro-optical devices;Materials Science and Engineering: B;1993-04
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