Defect generation sue to surface corrugation in InGaAsP/InP DFB laser structures grown by MOVPE on grating-formed InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm
2. CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength region
3. InGaAsP/InP distributed feedback buried heterostructure lasers with both facets cleaved structure
4. cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition
5. MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates
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1. Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure;Applied Physics Letters;2007-01
2. Overgrowth on InP corrugations for 1.55μm DFB LDs by reduction of carrier gas flow in LPMOCVD;Journal of Crystal Growth;2003-10
3. Overgrowth of submicron-patterned surfaces for buried index contrast devices;Semiconductor Science and Technology;2000-03-08
4. Optimized Grating Formation for Optoelectronic Devices;Journal of The Electrochemical Society;1997-05-01
5. Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings;Journal of Crystal Growth;1997-01
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