Effects of strain and temperature on excitonic emissions in ZnSeZnS strained-layer superlattices grown by low-pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Materials growth and its impact on devices from wide band gap II–VI compounds
2. Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlattices
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1. Strain effects in the common-cation II VI heterostructures: case of ZnS/ZnSe superlattices;Journal of Physics D: Applied Physics;2003-04-03
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3. ALE growth and optical characterization of ZnSe/ZnS strained quantum well structures on Si substrate;Journal of Crystal Growth;2001-03
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5. Exciton energy states and photoluminescence spectra of the strained-layer ZnS-ZnSe superlattices;Semiconductors;2000-05
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