Emission wavelength and cavity design dependence of laser behaviour in HgCdTe heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Optically pumped laser oscillation at ≊2.9 μm of a HgCdTe layer grown by metalorganic chemical vapor deposition
2. Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy
3. Photoluminescence and laser action of Hg1−xCdxTe (x≊0.5) layer grown by liquid‐phase epitaxy
4. Room-temperature laser emission near 2 μm from an optically pumped HgCdTe separate-confinement heterostructure
5. Laser action and photoluminescence in an indium‐dopedn‐type Hg1−xCdxTe (x=0.375) layer grown by liquid phase epitaxy
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1. Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers;Journal of Applied Physics;2023-02-15
2. Hot phonon effects and Auger recombination on 3 μm room temperature lasing in HgTe-based multiple quantum well diodes;Journal of Applied Physics;2022-08-21
3. HgCdTe-based heterostructures for terahertz photonics;APL Materials;2017-03
4. Reduced-Dimensionality HgTe-CdTe for the Infrared;Infrared Detectors and Emitters: Materials and Devices;2001
5. Laser emission in HgCdTe in the 2–3.5μm range;Journal of Crystal Growth;1999-02
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