Zn-doped InGaAsP (1.3 μm) contact layer for an inverted DH laser structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. Characterization of mass-transported p-substrate GaInAsP/InP buried-heterostructure lasers with analytical solutions for electrical and thermal resistances
2. Three- and four-layer LPE InGaAs(P) mushroom stripe lasers for λ = 1.30, 1.54, and 1.66 µm
3. Transferred-electron device as a large-signal laser driver
4. Pt/Ti Ohmic contact top++‐InGaAsP (1.3 μm) formed by rapid thermal processing
5. LPE growth of InP/InGaAsP/InGaAs/InP heterostructure at normal cooling rate at 630°C
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Unintentional Redistribution of Zn in InGaAsP/InP Heterostructures;Japanese Journal of Applied Physics;1996-02-15
2. Area‐Selective Diffusion of Zn in InP / In0.53Ga0.47As / InP for Lateral pn Photodiodes;Journal of The Electrochemical Society;1995-03-01
3. Doping Profile Analysis in Si by Electrochemical Capacitance‐Voltage Measurements;Journal of The Electrochemical Society;1995-02-01
4. Scattering mechanisms and defects in InP epitaxially grown on (001) Si substrates;Journal of Applied Physics;1994-10-15
5. Dopant activation energy and hole effective mass in heavily Zn-Doped InP;Journal of Electronic Materials;1994-09
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