Lattice distortion in LPE Ga1−xAlxAs layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
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1. Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication;Japanese Journal of Applied Physics;1997-07-15
2. Some aspects of the physics of man-made semiconductor heterosystems: superlattice electronic structure and related topics;Surface Science Reports;1993-11
3. Electron paramagnetic resonance and optically-detected magnetic resonance of donors in AlxGa1-xAs;Journal of Electronic Materials;1991-01
4. QUANTITATIVE ANALYSIS OF GaAlAs COMPOSITION AND ITS DOPANT CONCENTRATION BY Cs CLUSTER ION MASS SPECTROMETRY;Analytical Sciences;1991
5. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy;Materials Science and Engineering: B;1990-01
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