Monolithic integration of a single quantum well laser diode and a mode-size convertor using shadow-masked metalorganic vapour phase epitaxial growth-Reference-Cited by-同舟云学术

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Monolithic integration of a single quantum well laser diode and a mode-size convertor using shadow-masked metalorganic vapour phase epitaxial growth

Published:1994-12 Issue:1-4 Volume:145 Page:875-880
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Vermeire G.,Vermaerke F.,Moerman I.,Haes J.,Baets R.,Van Daele P.,Demeester P.,Gustafsson A.,Samuelson L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Integrated optical modeshape adapters in InGaAsP/InP for efficient fiber-to-waveguide coupling

2. Highly-reliable CW operation of 100 mW GaAlAs buried twin ridge substrate lasers with nonabsorbing mirrors

3. Integrated optic mode‐size tapers by selective organometallic chemical vapor deposition of InGaAsP/InP

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local probe techniques for luminescence studies of low-dimensional semiconductor structures;Journal of Applied Physics;1998-08-15

2. A review on fabrication technologies for the monolithic integration of tapers with III-V semiconductor devices;IEEE Journal of Selected Topics in Quantum Electronics;1997

3. MOVPE for InP-based optoelectronic device application;III-Vs Review;1996-04

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