Highly uniform InGaAsP growth by dual-fluid-layer structure metalorganic vapor phase epitaxy reactor with atmospheric pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Influence of gas mixing on the lateral uniformity in horizontal MOVPE reactors
2. Extremely uniform, reproducible growth of device quality InGaAsP:InP heterostructures in the T-shaped reactor at atmospheric pressure
3. Highly-uniform large-area MOVPE growth of InGaAsP by controlled stagnation point flow
4. Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation
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2. Wide-wavelength control by selective MOVPE and its applications to DFB-LD array for CWDM;Novel In-Plane Semiconductor Lasers;2002-05-24
3. Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices;Journal of Crystal Growth;2000-12
4. Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE;Journal of Crystal Growth;2000-02
5. Mass-transport effect on InP corrugation shape control of DFB-LDs under atmospheric pressure MOVPE;Journal of Crystal Growth;1998-12
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