InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP
2. Submilliamp threshold current (0.62 mA at 0°C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasers
3. Measurements of the polarization dependence of the gain of strained multiple quantum well InGaAs-InP lasers
4. 1.55 mu m polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier
5. Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
2. Interface simulation of strained and non-abrupt III–V quantum wells. Part 1: band profile calculation;Computer Physics Communications;1996-01
3. Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga0.62In0.38As superlattices;Materials Science and Engineering: B;1995-05
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