1. K.V. Shennoy, P.R. Nuythkens, C.G. Fonstad, G.D. Johnston, W.D. Goodhue and J.P. Donnelly, in: LEOS 93, OSA Proc., San Diego, CA, p. 9433
2. Ref. [3] reports maximm temperature to be 530 C for 4 h, whereas other results show that FET detoriates above 400°C: I. Deyhimy, Vitesse, private communication
3. Low-Temperature Surface Cleaning of GaAs by Electron Cyclotron Resonance (ECR) Plasma