Ordering of sulfur interlayer in molecular beam epitaxy-grown SrF2/S/GaAs(111) A and B-Reference-Cited by-同舟云学术

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Ordering of sulfur interlayer in molecular beam epitaxy-grown SrF2/S/GaAs(111) A and B

Published:1995-05 Issue: Volume:150 Page:1098-1103
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sugiyama M.,Maeyama S.,Watanabe Y.,Heun S.,Oshima M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2SxTreatment

2. Epitaxial Growth of Al on (NH4)2Sx-Treated GaAs

3. Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur‐terminated GaAs{111} surfaces

4. Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams

5. Sulfur passivation of GaAs surfaces

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1. MBE growth of fluorides;Microelectronics Journal;1996-07

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