Triangular-barrier optoelectronic switch by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Avalanche InP/InGaAs heterojunction phototransistor
2. A novel quantum‐well optoelectronic switching device with stimulated emission
3. A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy
4. Optically induced switching in ap‐channel double heterostructure optoelectronic switch
5. GaAs/InGaAs/AlGaAs optoelectronic switch in avalanche heterojunction phototransistor vertically integrated with a resonant cavity
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-threshold-switch phototransistor based on Kirk effect and float-zone silicon;Applied Physics Letters;2007-03-12
2. Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memory;Journal of Crystal Growth;1999-05
3. Symmetric triangular-barrier optoelectronic switch (S-TOPS) by gas source MBE;Journal of Crystal Growth;1997-05
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