Auto-doping of Ga in ZnSe/GaAs layers grown at low temperatures by post-heated molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth
2. Planar doping of p-type ZnSe layers with lithium grown by molecular beam epitaxy
3. Compensation processes in nitrogen doped ZnSe
4. Molecular Beam Epitaxy and Heterostructures;Joyce,1985
5. Low-temperature epitaxial growth of Zn chalcogenides on GaAs(001) by postheated molecular beams
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