The incorporation of oxygen into InAlAs, the role of trimethylindium (TMI)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference2 articles.
1. The effects of oxygen on the electronic and optical properties of AlInAs layers lattice‐matched to InP substrates grown by atmospheric‐pressure metal‐organic chemical vapor deposition
2. Purity and purification of source materials for III–V MOCVD
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2. Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium;Journal of Electronic Materials;1999-07
3. AlInP benchmarks for growth of AlGaInP compounds by organometallic vapor-phase epitaxy;Journal of Crystal Growth;1999-01
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5. Magnets and Semiconductor Devices. An InGaAs GRINSCH Structure and Its Application to High Speed Surface Emitting LEDs.;DENKI-SEIKO[ELECTRIC FURNACE STEEL];1998
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