Thickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Phosphor currents in ZnS:Mn ac thin film electroluminescent display devices
2. Low-threshold-voltage thin-film electroluminescent devices
3. Choice of dielectrics for TFEL displays
4. Improvement of Luminous Efficiency in ZnS:Tb, F Thin-Film Electroluminescent Devices Using Ferroelectric PbTiO3and Silicon Nitride as Carrier Accelerating Buffer Layers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices;Electrochemical and Solid-State Letters;2004
2. Insulators with High Stability for Electroluminescent Devices;Japanese Journal of Applied Physics;2003-06-15
3. Characteristics of Multilayered Barium Titanate Films and Their Effect on Thin-Film Electroluminescent Cells;Journal of The Electrochemical Society;2000
4. Impact of surface properties on the dielectric breakdown for polycrystalline and multilayered BaTiO3 thin films;Journal of Applied Physics;1997-12-15
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