Highly selective InGaAs growth by metalorganic chemical vapor deposition with a high-speed rotating susceptor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Selective MOCVD Growth for Application to GaAs/AlGaAs Buried Heterostructure Lasers
2. Butt‐coupled InGaAs metal‐semiconductor‐metal waveguide photodetector formed by selective area regrowth
3. Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures
4. A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVD
5. Selective growth of ultra-low resistance GaAs/InGaAs for high performance InGaAs FETs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective Growth Techniques and Their Application in WDM Device Fabrication;WDM Technologies;2002
2. Compositional change near the mask edge in selective InGaAs growth by low-temperature MOCVD;Journal of Crystal Growth;1996-02
3. Enhancement of f/sub max/ in InP/InGaAs HBTs by selective MOCVD growth of heavily-doped extrinsic base regions;IEEE Transactions on Electron Devices;1996
4. Surface Reactivity of Transition Metal CVD Precursors: Towards the Control of the Nucleation Step;Topics in Organometallic Chemistry
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