The effect of rapid early growth on the physical and electrical properties of heteroepitaxial silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. The preparation and properties of chemically vapor deposited silicon on sapphire and spinel
2. A survey of the heteroepitaxial growth of semiconductor films on insulating substrates
3. A Comparison of the Hole Mobility and Early Growth of Epitaxial Silicon on Flame Fusion, Flux, and Czochralski Spinel
4. Silicon on spinel: The interaction between deposition constituents and the substrate surface
5. A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and Spinel
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1. The selection of substrates for the heteroepitaxy of high-gap semiconductors;Journal of Materials Science Materials in Electronics;1998
2. The orientation of (Pb,La)TiO3 thin films grown on different substrates by multi-ion-beam reactive cosputtering technique;Ferroelectrics;1993-03
3. Comparison of phosphorus, arsenic and boron implants into bulk silicon and SOS;Solid-State Electronics;1990-06
4. References;Thin Films by Chemical Vapour Deposition;1990
5. Heteroepitaxial Films Consisting of a Mosaic Structure : Crystallographic Characterization;Defect Control in Semiconductors;1990
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