Formation and properties of transition layers in epitaxial films

Author:

Aleksandrov L.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference63 articles.

1. Proc. All Union Conf. on Structural Defects in Semiconductors;Aleksandrov,1969

2. Advances in Epitaxy and Endotaxy;Meyer,1971

3. Structure and properties of transition layers formed in the epitaxy process

4. Über die Epitaxie von Schichten der Verbindungshalbleiter und zur Bedeutung der Heteroepitaxie in der Halbleiterforschung

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3. The selection of substrates for the heteroepitaxy of high-gap semiconductors;Journal of Materials Science Materials in Electronics;1998

4. REFERENCES;Growth of Crystalline Semiconductor Materials on Crystal Surfaces;1984

5. Observations on the early stages of oxidation of titanium carbide;Metallurgical Transactions A;1982-10

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