Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV–VI compounds
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Phase relations and transformations in the system PbTe-GeTe
2. Hot wall epitaxy
3. Growth and characterization of PbTe epitaxial films grown by hot-wall epitaxy
4. TEM analysis of lead telluride films grown by hot-wall epitaxy on KCI and BaF2
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth of Bi-2212 single crystals by the travelling solvent zone melting method;Superconductor Science and Technology;2002-02-11
2. Crystal growth of HTSC materials;Superconductor Science and Technology;1993-08-01
3. Molecular beam epitaxy of strained PbTe/EuTe superlattices;Applied Physics Letters;1993-05-10
4. MBE of high mobility PbTe films and PbTe/Pb1-xEuxTe heterostructures;Journal of Crystal Growth;1993-02
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