Transmission electron microscope study of quartz crucibles used in growth of Czochralski silicon-Reference-Cited by-同舟云学术

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Transmission electron microscope study of quartz crucibles used in growth of Czochralski silicon

Published:1990-04 Issue:1-2 Volume:102 Page:157-166
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Fraundorf G.K.,Shive L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Semiconductor Silicon 1981;Murgai,1981

2. Semiconductor Silicon 1977;Murgai,1977

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Analysis of the reaction at the interface between Si melt and Ba-doped silica glass;Journal of Crystal Growth;2007-08

3. Reaction at the interface between Si melt and a Ba-doped silica crucible;Journal of Crystal Growth;2005-04

4. Reactions at the liquid silicon/silica glass interface;Journal of Crystal Growth;2003-04

5. Surface of Silica Glass Reacting with Silicon Melt: Effect of Raw Materials for Silica Crucibles;Japanese Journal of Applied Physics;2001-03-15

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