Vacuum stability of epitaxial NiGa and Ni2Ga3 layers MBE grown onto a GaAs substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt)
2. Interfacial reactions between Ni films and GaAs
3. Metallurgical study of Ni/GaAs contacts. I. Experimental determination of the solid portion of the Ni‐Ga‐As ternary‐phase diagram
4. Metallurgical study of Ni/GaAs contacts. II. Interfacial reactions of Ni thin films on (111) and (001) GaAs
5. Epitaxial, thermodynamically stabilised metal/III-V compound semiconductor interface: NiGa on GaAs (001)
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1. Hexagonal Ni38Mn28Ga34 alloy films grown on GaAs(111);Intermetallics;2015-12
2. Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism;Applied Physics Letters;2011-08-22
3. Fe3GaAs/GaAs(0 01): a stable and magnetic metal-semiconductor heterostructure;Thin Solid Films;2004-01
4. Solid state interdiffusions in epitaxial Fe/GaAs(001) heterostructures during ultrahigh vacuum annealings up to 450 °C;Journal of Applied Physics;1998-03-15
5. The ternary compound Fe3Ga2 − xAsx: a promising candidate for epitaxial and thermodynamically stable contacts on GaAs;Journal of Alloys and Compounds;1997-11
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