MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSe-Reference-Cited by-同舟云学术

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MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSe

Published:1990-04 Issue:1-4 Volume:101 Page:147-152
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

He Li,Zhong Jianguo,Li Jie,Lu Jian,Pong Zhonglin,Yu Meifang,Yu Jinbi,Xie Qinxi,Yuan Shixin

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Dependence of the condensation coefficient of Hg on the orientation and the stability of the Hg–Te bond for the growth of Hg1−xMxTe (M=Cd, Mn, Zn)

2. High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces

3. Influence of Ga‐As‐Te interfacial phases on the orientation of epitaxial CdTe on GaAs

4. CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization

5. Interface structure in heteroepitaxial CdTe on GaAs(100)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of van der Waals interfaces for broad-spectrum optoelectronics;Nature Materials;2020-02-03

2. Crystal Growth and Surfaces;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

3. CdTe epitaxial layers in ZnSe-based heterostructures;Journal of Crystal Growth;1999-05

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