Growth of MBE ZnSxSe1−x using a novel electrochemical sulphur source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
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2. Recent advances in the molecular beam epitaxy of the wide-bandgap semiconductor ZnSe and its superlattices
3. Growth of ZnSxSe1−x by MBE on (100)GaAs substrates: Effect of lattice-matching
4. Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular‐beam epitaxy
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