Impurity clouds in silicon and germanium-Reference-Cited by-同舟云学术

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Impurity clouds in silicon and germanium

Published:1981-04 Issue: Volume:52 Page:939-942
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Voronkov V.V.,Voronkova G.I.,Golovina V.N.,Zubov B.V.,Kalinushkin V.P.,Murina T.M.,Prokhorov A.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Gettering of surface and bulk impurities in Czochralski silicon wafers

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of annealing on the electrical properties of nitrogen-doped silicon single crystals grown by crucibleless zone melting;Physics of the Solid State;2009-11

2. Advanced Application of Resistivity and Hall Effect Measurements to Characterization of Silicon;ECS Transactions;2009-09-25

3. Deep level generation in nitrogen-doped float-zoned silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12

4. Small angle light scattering and clusters of thermal donors in Si;Journal of Applied Physics;2004-12-15

5. Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials;Review of Scientific Instruments;1999-11

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