Liquid phase epitaxy of GeSi on {111} Si substrates: lattice defect structure and electronic properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Liquid‐phase epitaxy and characterization of Si1−xGexlayers on Si substrates
2. Liquid phase epitaxy in the ternary system Si-Ge-Bi
3. Growth of Si1−xGexon silicon by liquid‐phase epitaxy
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5. Polycrystalline Semiconductors II, Grain Boundaries, Dislocations, and Heterointerfaces;Albrecht,1991
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1. Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn solution;Thin Solid Films;2020-06
2. Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications;Scientific Reports;2019-03-13
3. Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate;Journal of Inorganic Materials;2017
4. Heteroepitaxial Growth of Ge-Rich SiGe Films on Si for Solar Cells;Advanced Materials Research;2014-07-28
5. Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
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