Liquid phase epitaxial growth of In1−Ga P1−As On GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Liquid phase epitaxial growth of GaxIn1−xP
2. Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP
3. Asymmetric Cracking in III–V Compounds
4. Organometallic Vapor Phase Epitaxial Growth of In1-xGaxP (x∼0.5) on GaAs
5. Composition studies of MBE GaInP alloys by Rutherford scattering and x‐ray diffraction
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Zn diffusion of In0.5Ga0.5P investigated by photoluminescence measurements;Thin Solid Films;1997-05
2. Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs;Journal of Electronic Materials;1996-05
3. Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaPxAs1-x(x=0, 0.2, 0.4) Substrates;Japanese Journal of Applied Physics;1990-11-20
4. Low temperature LPE growth and photoluminescence of InGaAsP on GaAsP;Applied Surface Science;1988-09
5. Growth of In0.5Ga0.5P on GaAs by LPE: The influence of Growth Temperature and Lattice Mismatch on Photoluminescence;Japanese Journal of Applied Physics;1988-07-20
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