Transmission electron microscopic observation of defects in heavily doped LPE InGaAsP layers with Zn, Cd, Sn and Te
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference58 articles.
1. Electrical and electron microscope studies of the annealing of tellurium-doped gallium arsenide
2. The nature of defects inn+ gallium arsenide
3. The nature of defects of crystalline structure in GaAs heavily doped with Te
4. An electron microscopy study of the effects of annealing on the defect structure of heavily silicon-doped gallium arsenide
5. Transmission electron microscopy study of microdefects in dislocation‐free GaAs and InP crystals
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of micro-nanostructural changes on the absorption and emission characteristics of InGaAsP photocathodes;Modern Physics Letters B;2024-05-30
2. Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale;ACS Applied Materials & Interfaces;2021-01-15
3. Grown-in defects and thermal instability affecting the reliability of lasers: III–Vs versus III-nitrides;Reliability of Semiconductor Lasers and Optoelectronic Devices;2021
4. A Review of Materials Issues and Degradation of III-V Compound Semiconductors and Optical Devices;ECS Transactions;2010-10-01
5. Reliability issues in III–V compound semiconductor devices: optical devices and GaAs-based HBTs;Microelectronics Reliability;1999-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3