Comparison of calculated and measured dislocation density in LEC-grown GaAs crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. A high temperature creep model for GaAs
2. Model-based control of thermal stresses during LEC growth of GaAs II. Crystal growth experiments
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5. Doctoral Dissertation;Koai,1990
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