Misfit dislocations in finite lateral size Si1-xGex films grown by selective epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
2. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
3. New approach to the high quality epitaxial growth of lattice‐mismatched materials
4. Improvement in heteroepitaxial film quality by a novel substrate patterning geometry
5. Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas
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