Epilayers with extremely low dislocation densities grown by isoelectronic doping of hydride VPE grown InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Bipolar diodes fabricated on isoelectronically doped InP: Improvement of device performances and uniformity
2. Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
3. Reduction of dislocations in GaAs and InP epitaxial layers by quasi ternary growth and its effect on device performance
4. Minority carrier lifetime improvement by single strained layer epitaxy of InP
5. Modeling of chemical vapor deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theoretical treatment of A3B5chloride vapour-phase epitaxy: growth, doping, optimization;Semiconductor Science and Technology;1993-11-01
2. Improving the quality of microelectronic devices by strained layer epitaxy;Materials Science and Engineering: B;1993-06
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