In-situ maskless selective area epitaxy of GaAs using a low-energy Ga focused ion beam
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
2. Semiconductor lasers fabricated by selective area epitaxy
3. In-situ selective-area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask
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5. GaAs Films Heteroepitaxially Grown on Si Substrates by Mixture Beams of Ions and Molecules
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1. Experimental results using an improved low-energy focussed ion beam column with booster principle and free-standing target;Optik;2014-06
2. A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beam;Journal of Crystal Growth;2007-04
3. Low energy focused ion beam system design;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-07
4. Impact of Coulomb interactions on the performance of a low energy focused ion beam system;Journal of Applied Physics;2005-03-15
5. Maskless selective growth and in situ beryllium-doping of GaAs grown by low-energy focused ion beam;Journal of Crystal Growth;2005-02
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