Improvement of the morphological quality of the Si surface using an optimised in-situ oxide removal procedure prior to MBE growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. High-Temperature SiO2Decomposition at the SiO2/Si Interface
2. Scanning tunneling microscope study on mid-desorption stages of native oxides on Si(111)
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4. Si-Beam Radiation Cleaning in Molecular-Beam Epitaxy
5. Trapping of oxygen at homoepitaxial Si‐Si interfaces
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1. Piezoresistance in Strained Silicon and Strained Silicon Germanium;MRS Proceedings;2006
2. Piezoresistance of silicon and strained Si0.9Ge0.1;Sensors and Actuators A: Physical;2005-09
3. Effect of Oxidation Temperature on the Electrical Characteristics of Ultrathin Silicon Dioxide Layers Plasma Oxidized in Ultrahigh Vacuum;Physica Scripta;1999
4. Relaxation of strained, epitaxial Si[sub 1−x]Sn[sub x];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
5. Quantitative secondary ion mass spectrometry analysis of SiO2 desorption during in situ heat cleaning;Thin Solid Films;1998-05
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