Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. A comparative study of heavy boron doping in silicon and Si1−x Gex layers grown by molecular beam epitaxy
2. Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
3. Low‐temperature Si molecular beam epitaxy: Solution to the doping problem
4. Modulation-doped superlattices with delat layers in silicon
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1. Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply;Journal of Applied Physics;2023-11-15
2. Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source;Japanese Journal of Applied Physics;2023-05-04
3. Highly phosphorus-doped crystalline Si layers grown by pulse-magnetron sputter deposition;Journal of Applied Physics;2009-04
4. Determination of the surface segregation ratio of P in Si(1 0 0) during solid-source molecular beam epitaxial growth;Semiconductor Science and Technology;2006-11-30
5. Investigation of phosphorus surface segregation by X-ray scattering measurements;Surface Science;2005-04
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