Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation-Reference-Cited by-同舟云学术

Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation

Published:1996-01 Issue:1-2 Volume:158 Page:84-88
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Masuda Atsushi,Yamanaka Yasuhiro,Tazoe Mitsutoshi,Nakamura Takanori,Morimoto Akiharu,Shimizu Tatsuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. A new solid state memory resistor

2. Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface

3. Preparation of Pb(Zn0.52Ti0.48)O3Films by Laser Ablation

4. Ferroelectric properties of lead‐zirconate‐titanate films prepared by laser ablation

5. Synthesis of ferromagnetic Bi‐substituted yttrium iron garnet films by laser ablation

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