Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. UHVCVD growth of Si/SiGe heterostructures and their applications
2. Physics of Semiconductor Devices;Sze,1981
3. Strain relaxation kinetics in Si1−xGex/Si heterostructures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of Si/Si1-xGex/Si (x < 0.1) Quantum Wells by Modulating the Ge Molecular Flow. II. Study of Properties;Bulletin of the Lebedev Physics Institute;2019-03
2. Effects of substrate bias and rapid thermal processing on the luminescence of Si/SiGe multiple quantum wells grown by MBE;Thin Solid Films;1997-02
3. Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum‐chemical vapor deposition;Applied Physics Letters;1996-09-02
4. Characterization of Si1−xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
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