Studies on interface curvature during vertical Bridgman growth of InP in a flat-bottom container
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals
2. Proc. 5th Int. Conf. on InP and Related Materials;Müller,1993
3. Proc. 6th Int. Conf. on InP and Related Materials;Kawarabayashi,1994
4. Liquid-encapsulated Czochralski growth of InP crystals
5. A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of III–V compound semiconductors
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